Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride

Abstract

The importance of silicon nitride (Si 3 N 4 ) prepared by the chemical vapor deposition (C VD) technique is discussed briefly. A computer code was used to calculate CVD phase diagrams useful for the preparation of this material. Theoretical deposition efficiencies and gaseous phase compositions are also reported. The reactants include NH 3 /SiH 4 , NH 3 /SiH 2 Cl 2 , NH 3 /SiCl 4 , and NH 3 /SiF 4 . The effect of N 2 , H 2 , and Ar additions, as well as the system pressure, are evaluated. The results are compared with experimental data from the literature.