Journal of Vacuum Science and Technology · 1977 · 10 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSolid State PhysicsDopingRare-earth-doped MaterialsSemiconductor Device MaterialsSurface PhysicsAuger DecayBoron IncorporationDoped SemiconductorsIn-situ Doping
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation G. Moore, H. Guckel, M. G. Lagally; Auger investigation of boron‐doped SiO2/Si. J. Vac. Sci. Technol. 1 January 1977; 14 (1): 70–74. https://doi.org/10.1116/1.569176 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science and Technology Search Advanced Search |Citation Search