IEEE Electron Device Letters · 1982 · 15 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesVlsi DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignInterconnect DesignInterconnect TechnologyMetal-semiconductor ContactsSemiconductor LasersCapacitanceCapacitance ReductionDensityDevice FabricationVlsi Implementation
A new technique is described for reliably forming low resistance links by using a laser to bridge a lateral gap between two Al conductors deposited on insulating polysilicon. Resistances in the range of 1-10 ohms were achieved for gap widths of approximately 2-3 microns using 1 msec pulses from an argon laser. This technique should be ideally suited to implementing defect avoidance using redundancy in large RAM's and complex VLSI circuits. It requires a single level of metal and should provide higher density and lower capacitance when compared to alternative techniques.
2
Laser programmed vias for restructurable VLSI
J.I. Raffel, M.L. Naiman, Ricardo Burke et al. · 1980 · 13 citations
A high-speed Hi-CMOSII 4K static RAM
O. Minato, T. Masuhara, Takeshi Sasaki et al. · IEEE Journal of Solid-State Circuits · 1981 · 12 citations
Engineering, Computer Engineering, Electrical Engineering +17