Direct patterning of spin-on glass with 157nm lithography: Application to nanoscale crystal growth

Abstract

Selective area homoepitaxial growth of InP in 50nm scale dense features has been demonstrated using hydrogen silsesquioxane (HSQ) as the growth mask. The HSQ growth mask was patterned lithographically using high resolution interference lithography at 157nm. Lithographic process conditions were optimized, including postapplication bake temperature, developer normality, and oxygen levels during exposure.