IEEE Transactions on Nanotechnology · 2010 · 32 citations · 16 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsCurrent DistributionElectrical ConductivityOxide SemiconductorsPercolation TheorySemiconductor Thin FilmsThin Film Electrical PropertiesConductive NetworksElectrical BreakdownFractal DimensionPercolation BehaviorPercolation ConductivityPoisson DistributionResistive SwitchingThin Oxide Films
A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.
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<i>Introduction to Percolation Theory</i>
Dietrich Stauffer, Amnon Aharony, Sidney Redner · Physics Today · 1993 · 6.8K citations
Fractal Dimension of Dielectric Breakdown
L. Niemeyer, L. Pietronero, H. J. Wiesmann · Physical Review Letters · 1984 · 1.6K citations