IEEE Electron Device Letters · 1998 · 14 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesAmorphous Electronic MaterialsAmorphous MaterialsDielectricsSemiconductor Device MaterialsSemiconductor ReliabilitySilicon MaterialsAmorphous AlloysAmorphous CarbonAmorphous SiliconBreakdown MechanismsBreakdown VoltageDielectric ConstantLeakage
We report the development of a new metal-to-metal antifuse with amorphous carbon as the dielectric. Amorphous carbon antifuses have several characteristics making them superior to amorphous silicon antifuses, including lower values of OFF-state leakage current, ON-state resistance, dielectric constant, and breakdown voltage. Most importantly, amorphous carbon antifuses do not show ON-OFF switching, which is observed in amorphous silicon antifuses. A new model is proposed to explain the breakdown mechanism and ON-state reliability of amorphous carbon antifuses.
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