Hameed A. Naseem

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri, Wei Du, Joe Margetis et al. · Applied Physics Letters · 2014 · 219 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +15

An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K

Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis et al. · Applied Physics Letters · 2016 · 214 citations

Optical Materials, Engineering, Laser Science +17

Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Huong Tran, Wei Du, Seyed Amir Ghetmiri et al. · Journal of Applied Physics · 2016 · 151 citations

Engineering, Optical Glass, Spectral Absorption Coefficient +19

Interaction of aluminum with hydrogenated amorphous silicon at low temperatures

M. Shahidul Haque, Hameed A. Naseem, W.D. Brown · Journal of Applied Physics · 1994 · 137 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +17

Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection

Thach Pham, Wei Du, Huong Tran et al. · Optics Express · 2016 · 134 citations · Full text