Concepedia

Three dimensional metallization for vertically integrated circuits

Peter Ramm, D. Bollmann, Rosi Braun, R. Buchner, U. Cao-Minh, M. Engelhardt, G. Errmann, T. Graßl, K. Hieber, H. Hübner,

Microelectronic Engineering · 1997 · 91 citations · 4 references

DOI

Concepts

References

4

Synthesis of thin films by atmospheric pressure chemical vapor deposition using amido and imido titanium(IV) compounds as precursors

Renaud M. Fix, Roy G. Gordon, David M. Hoffman · Chemistry of Materials · 1990 · 177 citations

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Film Properties of CVD Titanium Nitride Deposited with Organometallic Precursors at Low Pressure Using Inert Gases, Ammonia, or Remote Activation

A. Intemann, Heinrich Koerner, F. Koch · Journal of The Electrochemical Society · 1993 · 70 citations

, , +14

In Situ XPS Studies of the Deposition of TiN<i><sub>x</sub></i>C<i><sub>y</sub></i> Films from Tetrakis(dimethylamido)titanium(IV) and Bis[<i>N</i>,<i>N</i>‘-bis(<i>tert</i>-butyl)ethylenediamido]titanium(IV)

G. Ruhl, R. Rehmet, M. Knižová et al. · Chemistry of Materials · 1996 · 28 citations

, , +13

Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology

G. Ruhl, B. Fröschle, Peter Ramm et al. · Applied Surface Science · 1995 · 16 citations

, , +14