Degradation of silicon bipolar junction transistors at high forward current densities

Abstract

The physical degradation mechanisms of silicon bipolar function transistors at high forward current densities were delineated quantitatively using three n/p/p and one p/n/p state-of-the-art submicron polysilicon-emitter transistor technologies. The increase of the operating current gain and decrease of emitter series resistance from million-ampere per square centimeter stress current are related to hydrogenation of the electronic traps at the metal-silicide/polycrystalline-Si and polycrystalline-Si/crystalline-Si emitter contact interfaces. A demonstration of the 10-year operation Time-to-Failure extrapolation methodology is also presented.