Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and its application to III-Sb-based quantum-well broad-area edge-emitting laser diodes monolithically grown on an Si (0 0 1) substrate. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. A use of 5 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}$</tex></formula> miscut Si substrates enables simultaneous IMF formation and suppression of an antiphase domain, resulting in a drastic suppression of dislocation density over the III-Sb epilayer and realization of electrically injected laser diodes operating at 77 K. The current–voltage characteristics indicate a diode turn-<emphasis emphasistype="smcaps">on</emphasis> of 0.7 V, which is consistent with a theoretical built-in potential of the laser diode. This device is characterized by a <formula formulatype="inline"> <tex Notation="TeX">$9.1\hbox{-}\Omega$</tex></formula> forward resistance and a leakage current density of <formula formulatype="inline"><tex Notation="TeX">$0.7 \hbox{A/cm}^{2}$</tex></formula> at <formula formulatype="inline"><tex Notation="TeX"> $-\hbox{5}$</tex></formula> V and <formula formulatype="inline"><tex Notation="TeX">$46.9\, \hbox{A/cm}^{2}$</tex></formula> at <formula formulatype="inline"><tex Notation="TeX">$-\hbox{15}$</tex></formula> V. </para>