Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

A. Jallipalli, Ganesh Balakrishnan, S. H. Huang, +5

Nanoscale Research Letters

SemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringMisfit Dislocations +13

GaSb/GaAs type-II quantum dots grown by droplet epitaxy

Baolai Liang, Andrew Lin, Nicola Pavarelli, +7

Nanotechnology

SemiconductorsIi-vi SemiconductorEngineeringGasb Quantum DotsPhysics +8

Band Alignment Tailoring of InAs_1−<i>x</i>Sb_<i>x</i>/GaAs Quantum Dots: Control of Type I to Type II Transition

Jun He, Charles J. Reyner, B. L. Liang, +9

Nano Letters

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction

Charles J. Reyner, Jin Wang, Kalyan Nunna, +4

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorEngineeringDislocation InteractionCrystalline Defects +8

Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Elizabeth H. Steenbergen, Kalyan Nunna, Lu Ouyang, +4

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Materials ScienceMaterials EngineeringIi-vi SemiconductorPhotoluminescenceEngineering +11

Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

Kalyan Nunna, Siew Li Tan, Charles J. Reyner, +5

IEEE Photonics Technology Letters

PhotonicsElectrical EngineeringEngineeringPhysicsArray Technique +13

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

Yu. I. Mazur, V. G. Dorogan, Gregory J. Salamo, +5

Applied Physics Letters

Optical MaterialsType-ii Band AlignmentsEngineeringLaser ApplicationsOptoelectronic Devices +23

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

Jun Tatebayashi, A. Jallipalli, M. N. Kutty, +5

IEEE Journal of Selected Topics in Quantum Electronics

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device +15

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Kalyan Nunna, Shanthi Iyer, Liangjin Wu, +5

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesNitrogen IncorporationSemiconductor Nanostructures +19

Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells

J. Li, Shanthi Iyer, Sudhakar Bharatan, +5

Journal of Applied Physics

Optical MaterialsEngineeringTemperature DependenceOptoelectronic DevicesLuminescence Property +14