Charles J. Reyner - Concepedia

Author

Charles J. Reyner

California NanoSystems Institute ORCID

Also Known As

C. J. Reyner, C. Reyner, C.J. Reyner, Charles J. Reyner, Charles Reyner

Publications

538

Citations

H-Index

Concepts

All Affiliations

California NanoSystems Institute University of California, Los Angeles Wright-Patterson Air Force Base Munster Technological University University of Arkansas at Fayetteville

About

Charles J. Reyner is an author at California NanoSystems Institute specializing in engineering, physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	305
2	Applied Physics	10	10	305
3	Materials Science	5	5	143
4	Electrical Engineering	3	3	71
5	Natural Sciences	2	2	62

Charles J. Reyner

Publications

452

Citations

H-Index

Page 1

	Year	Citations
GaSb/GaAs type-II quantum dots grown by droplet epitaxy Baolai Liang, Andrew Lin, Nicola Pavarelli, Nanotechnology SemiconductorsIi-vi SemiconductorEngineeringGasb Quantum DotsPhysics	2009	48
800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots Tobias Nowozin, Leo Bonato, A. Högner, Applied Physics Letters	2013	43
Strong interband transitions in InAs quantum dots solar cell Jiang Wu, Yahia F. Makableh, R. Vasan, Applied Physics Letters Ii-vi SemiconductorExperimental Nuclear PhysicsEngineeringPhysicsStrong Interband Transitions	2012	43
Band Alignment Tailoring of InAs<sub>1−<i>x</i></sub>Sb<sub><i>x</i></sub>/GaAs Quantum Dots: Control of Type I to Type II Transition Jun He, Charles J. Reyner, B. L. Liang, Nano Letters	2010	39
Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction Charles J. Reyner, Jin Wang, Kalyan Nunna, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEngineeringDislocation InteractionCrystalline Defects	2011	36
InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors Gamini Ariyawansa, Charles J. Reyner, Elizabeth H. Steenbergen, Applied Physics Letters SemiconductorsMaterials ScienceWide-bandgap SemiconductorEngineeringElectronic Materials	2016	33
Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique Kalyan Nunna, Siew Li Tan, Charles J. Reyner, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringEngineeringPhysicsArray Technique	2011	31
Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures Yu. I. Mazur, V. G. Dorogan, Gregory J. Salamo, Applied Physics Letters Optical MaterialsType-ii Band AlignmentsEngineeringLaser ApplicationsOptoelectronic Devices	2012	31
InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation Gamini Ariyawansa, Joshua M. Duran, Charles J. Reyner, Micromachines	2019	30
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers Paul J. Simmonds, Ramesh B. Laghumavarapu, Meng Sun, Applied Physics Letters Materials ScienceSemiconductorsIi-vi SemiconductorOptical MaterialsEngineering	2012	28

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