Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Nutan Gautam, H. S. Kim, M. N. Kutty, +3

Applied Physics Letters

SemiconductorsPhotonicsElectrical EngineeringWide-bandgap SemiconductorLayer Superlattice Photodiode +13

Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors

Brianna Klein, E. Plis, M. N. Kutty, +4

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesVarshni ParametersSemiconductors +14

Passivation techniques for InAs/GaSb strained layer superlattice detectors

E. Plis, M. N. Kutty, Sanjay Krishna

Laser & Photonics Review

SemiconductorsMaterials ScienceSls DetectorsElectronic DevicesDielectric Passivation +12

Lateral diffusion of minority carriers in InAsSb-based nBn detectors

E. Plis, Stephen Myers, M. N. Kutty, +4

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsInfrared Sensor +7

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Gilberto A. Umana‐Membreno, Brianna Klein, H Kala, +6

Applied Physics Letters

Individual Carrier MobilitiesWide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic Devices +16

Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m

Manish Mehta, A. Jallipalli, Jun Tatebayashi, +5

IEEE Photonics Technology Letters

Wide-bandgap SemiconductorEngineeringLaser ScienceImf FormationLaser Applications +18

GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays

M. Mehta, Ganesh Balakrishnan, S. Huang, +6

Applied Physics Letters

SemiconductorsPhotonicsElectrical EngineeringMaterials ScienceImf Band Structure +13

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

E. Plis, M. N. Kutty, Stephen Myers, +4

Infrared Physics & Technology

PhysicsInfrared SensorApplied PhysicsInfrared OpticLayer Superlattice Detectors

1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

A. Jallipalli, M. N. Kutty, Ganesh Balakrishnan, +7

Electronics Letters

Synthesis of three new ditertiary phosphines: 1-Diphenylphosphino-2-bis(m-fluorophenyl)phosphinoethane, 1-diphenylphosphino-2-bis(p-fluorophenyl)phosphinoethane and 1-diphenylphosphino-2-m-bis(trifluoromethyl)phenylphosphinoethane

Pramash N. Kapoor, Devendra D. Pathak, G. Gaur, +1

Journal of Organometallic Chemistry

New Ditertiary PhosphinesOrganic ChemistryChemistryDerivative (Chemistry)Synthetic Chemistry