Journal of Physics D Applied Physics · 2011 · 65 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsInfrared DetectorsPhotodetectorsSemiconductor DetectorsSemiconductor PhysicsStrain EngineeringWide Band Gap SemiconductorsHigh-temperature Device OperationInfrared PhotodetectorsNarrow-bandgap SemiconductorsNbn Thin FilmsSemiconductor Infrared MaterialsSpectral Response CharacterizationSuperlattice MaterialsSuperlattices
The temperature-dependent behaviour of the bandgap of mid- and long-wavelength as well as dual-colour (mid-/long-wavelength) infrared detectors based on InAs/GaSb strained layer superlattices (SLSs) with p-i-n and nBn designs has been investigated with temperature-dependent absorption, photoluminescence and spectral response techniques. Values of Varshni parameters, zero temperature bandgap E 0 and empirical coefficient α, were extracted and tabulated. The MWIR and LWIR superlattice detectors showed a temperature change of 0.325 meV K −1 and 0.282 meV K −1 , respectively. These values are a factor of two lower than that of HgCdTe and InSb, making them attractive for higher operating temperatures.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations