Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

Abstract

In this letter, the insertion of a Cu nanocrystal (NC) layer between the Pt electrode and <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> film is proposed as an effective method to improve resistive switching properties in the <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> -based resistive switching memory. This Cu/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> :Cu/Cu NC/Pt memory exhibits asymmetric nonpolar resistive switching behavior, low operating voltage ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$&lt;$</tex></formula> 1.2 V), low Reset current <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$(&lt; \hbox{50}\ \mu\hbox{A})$</tex></formula> , and high uniformity of resistance switching. The switching mechanism is believed to be related with the formation and rupture of conductive filament. The NC-induced electrical field enhancement has the benefit to accelerate and control the CF formation process, thus leading to low-switching threshold voltage and high uniformity.