Junning Chen

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Qi Liu, Shibing Long, Hangbing Lv et al. · ACS Nano · 2010 · 462 citations

Resistive switching memory effect of ZrO2 films with Zr+ implanted

Qi Liu, Weihua Guan, Shibing Long et al. · Applied Physics Letters · 2008 · 280 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

Qi Liu, Shibing Long, Wei Wang et al. · IEEE Electron Device Letters · 2009 · 216 citations

Engineering, -Based Reram, Emerging Memory Technology +16

Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application

Chunyu Peng, J. Huang, Changyong Liu et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2018 · 164 citations

Hspice Simulation Results, Write Speed, Engineering +16

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

Qi Liu, Chunmeng Dou, Yan Wang et al. · Applied Physics Letters · 2009 · 117 citations

Materials Science, Materials Engineering, Electrical Engineering +15