IEEE Photonics Technology Letters · 1995 · 166 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsPhotonic Integrated CircuitsQuantum OptoelectronicsQuantum Well DevicesSemiconductor LasersCavity DesignHigh-power Semiconductor LasersHigh-temperature Device OperationIntegrated LasersIntegrated Semiconductor LasersLaser ThresholdQuantum Well LasersWafer Materials
We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 μm. The devices use a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion. Five device sizes between 8 and 20 μm were found to operate continuously at room temperature (23/spl deg/C), The lowest room-temperature continuous-wave threshold current of 2.3 mA was measured on an 8-μm diameter device, while the highest continuous-wave operating temperature of 33/spl deg/C was measured on a 12-μm device.
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Low threshold, wafer fused long wavelength vertical cavity lasers
J.J. Dudley, D.I. Babic, Richard P. Mirin et al. · Applied Physics Letters · 1994 · 118 citations