Applied Physics Letters · 1993 · 103 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHeterostructure DesignHeterostructure DevicesHeterostructure LasersHole TransportHole Transport LayersValence BandValence Band StructureVertical-cavity Surface-emitting Lasers
We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2–3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600 °C growth temperatures.
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High-power vertical-cavity surface-emitting lasers
Frank H. Peters, Matthew Peters, D.B. Young et al. · Electronics Letters · 1993 · 56 citations