IEEE Photonics Technology Letters · 2000 · 38 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthLaser DiodesLaser PhysicsQuantum WellsSemiconductor LasersStrain EngineeringCurrent DensityLasersMolecular Beam EpitaxyQuantum Well GrowthQuantum Well Laser DiodesQuantum Well LasersSemiconductor Laser DiodesStrained Quantum Wells
A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AlGaInAs multiple-quantum well (MQW) 1.58-μm laser diodes on InP. A threshold current density as low as 510 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> has been demonstrated for broad area lasers with 1% strained AlGaInAs MQWs, which is the best MBE result in this material system. A single facet pulsed power as high as 0.56 W is obtained. It is also found that the efficiency and internal loss of digital alloy AlGaInAs QW devices are comparable to lasers grown by conventional MBE.
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A. Kasukawa, R. Bhat, Chung-En Zah et al. · Applied Physics Letters · 1991 · 45 citations