Journal of The Electrochemical Society · 1984 · 80 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceInterface ScienceMaterials ChemistrySurface ScienceHigh-temperature MaterialsInterface EngineeringMetalsSemiconductor InterfacesSurface PhysicsSurface ReactivityElevated-temperature Material PropertiesInterfacial Oxide LayersSilica-based MaterialsSilicon-containing AlloysSurface Chemistry Of SilicaTemperature EffectsTitanium Oxides
We have investigated the interaction between Ti and in the temperature range of 400° to about 1000°C. The reaction proceeds in a layer‐by‐layer fashion and consists of reduction followed by the formation of a Ti‐rich silicide at the interface. At higher temperatures, a Ti‐rich oxide is formed near the surface. The reaction starts at approximately 400°C, and the loss of becomes significant above 500°C. A strong interaction between Ti and takes place at 700°C and above. The thicker the , the higher resistance it has to degradation due to elevated temperature effects.