2002 · 12 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationIntegrated Circuit DesignSemiconductor ReliabilityBipolar Junction Transistor SimulationBipolar Junction Transistor Small-signal ModelsCompact Device ModelingCompact ModelingDevice Scaling EffectsField-effect Transistor SimulationPhysics-based Device ModelingTechnology Scaling
A scaleable, statistical model has been developed for SiGe HBTs. SPICE Gummel-Poon model parameters are scaled, and statistics added, using language features built into HSPICE. DC and AC fit is good over a wide range in emitter sizes. Features of IBM's HBT technology which make scaling work are discussed.
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Joachim N. Burghartz, J.Y.-C. Sun, C. Stanis et al. · IEEE Transactions on Electron Devices · 1992 · 53 citations