Scalable small-signal model for BJT self-heating

R.M. Fox, S.-G. Lee

IEEE Electron Device Letters · 1991 · 29 citations · 6 references

Concepts

Abstract

The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y/sub 22/ and Y/sub 12/. A frequency-domain solution to the heat-flow equation is presented. It applies to any rectangular emitter geometry. This model, although simple enough for CAD, predicts thermal spreading impedance with good accuracy for a wide range of frequencies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

6