IEEE Electron Device Letters · 2007 · 35 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrostrip CircuitsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor HeterostructuresAluminum NitrideBandwidthHeterostructure DevicesHigh-frequency ElectronicsMaximum Power OutputMicrowave DevicesRadio-frequency DevicesThermal Dissipation
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%. </para>
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Heterostructure-barrier-varactor design
Jan Stake, Steven Jones, L. Dillner et al. · IEEE Transactions on Microwave Theory and Techniques · 2000 · 57 citations · Full text