Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler

Abstract

High-performance InGaAs-InAlAs-AlAs heterostructure barrier varactors (HBV's) have been designed, fabricated, and RF tested in a 250-GHz tripler block. The devices with two barriers stacked on the same epitaxy are planar integrated with coaxial-, coplanar-, and strip-type configurations. They exhibit state-of-the-art capacitance voltage characteristics with a zero-bias capacitance C/sub 3//sup 0/ of 1 fF//spl mu/m/sup 2/ and a capacitance ratio of 6:1. Experiments in a waveguide tripler mount show a 9.8-dBm (9.55-mW) output power for 10.7% conversion efficiency at 247.5 GHz. This is the highest output power and efficiency reported from an HBV device at J-band (220-325 GHz).