High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

Abstract

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.