Stability of plasma deposited thin film transistors — comparison of amorphous and microcrystalline silicon

The physics of amorphous-silicon thin-film transistors

M. J. Powell · IEEE Transactions on Electron Devices · 1989 · 470 citations

Engineering, Electrical Engineering, Materials Science +17

Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

Ralf B. Wehrspohn, S. C. Deane, I. D. French et al. · Journal of Applied Physics · 2000 · 151 citations

Engineering, Materials Engineering, Materials Science +17

Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors

S. C. Deane, Ralf B. Wehrspohn, M. J. Powell · Physical review. B, Condensed matter · 1998 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

Pere Roca i Cabarrocas, R. Brenot, Pavel Bulkin et al. · Journal of Applied Physics · 1999 · 87 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Characterization of instability in amorphous silicon thin-film transistors

Yoshiyuki Kaneko, Akira Sasano, T. Tsukada · Journal of Applied Physics · 1991 · 73 citations

Engineering, Electrical Engineering, Materials Science +17