A reliable and manufacturable method to induce a stress of >1 GPa on a P-channel MOSFET in high volume manufacturing

Abstract

This letter discusses a reliable and manufacturable integration technique to induce greater than 1 GPa of stress into a p-channel MOSFET, which will be required to increase the drive current beyond 1 mA/μm at the sub-90-nm process generation. Uniaxial compressive stress is introduced into the p-channel by both a selective deposition of SiGe in the source/drain and an engineered 2.5-GPa compressively stressed nitride. The highest to date compressively stressed SiN film is obtained by heavy ion bombardment during the deposition of the film.