Fabrication of highly reflecting epitaxy-ready Si-SiO/sub 2/ Bragg reflectors

Abstract

A complementary metal-oxide-semiconductor-compatible process for fabrication of highly reflecting Si-SiO/sub 2/ Bragg mirrors with a crystalline top layer was developed. It comprises only one step of wafer-bonding and allows for subsequent epitaxial growth on the mirror. A six-pair reflector centered at 1400 nm with a 99% bandwidth of 700 nm and a surface roughness of 0.136 nm is demonstrated.