A high-speed silicon FET for efficient DC-DC power conversion

Abstract

A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1-5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good on-state resistance and off-state breakdown voltage. Power efficiencies in excess of 88% were realized in a synchronous buck converter running at 1.3 MHz.