2009 · 35 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsCapacitanceComplementary Metal-oxide-semiconductor DesignPower MosfetsVertical Power Devices
A new generation of Power MOSFET technology has been introduced. The devices are manufactured in a standard 0.35¿m CMOS production line with only few process modules being adapted for the requirements of vertical power transistors with a 2x improvement in Figure of Merit (FOM). This improvement results mainly from the reduction in Miller capacitance.