Inertial sensor technology using DRIE and wafer bonding with connecting capability

Abstract

A novel device structure utilizing deep reactive ion etching (DRIE) technology and aligned wafer bonding was developed. In this structure, an interconnecting scheme for electrical signal routing with signal crossovers is realized. Also, the 'footing effect' and the 'bowing effect,' which are inherent in DRIE processes, were investigated in detail. A mask layout strategy for solving the footing effect was developed. A novel two-step etching process was developed for solving the bowing effect. Lateral accelerometers (one axis and two-axis) were successfully fabricated using this technology.