IEEE Photonics Technology Letters · 1996 · 12 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsPhotonicsFiber-optic CommunicationNonlinear Optical MaterialsNonlinear OpticsOptical Properties Of SemiconductorsOptical ResonatorsOptical SwitchingFiber Optic Communication SystemsNonlinear Integrated OpticsNonlinear Optical ResonatorsNonlinear Optical SwitchingOptical BistabilityOptical Nonlinearity
We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.
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Low threshold, wafer fused long wavelength vertical cavity lasers
J.J. Dudley, D.I. Babic, Richard P. Mirin et al. · Applied Physics Letters · 1994 · 118 citations