Modelling of passive elements for coplanar SiGe MMIC's

Ralf Doerner, John Gerdes, C. Rheinfelder, F.J. Schmückle, W. Heinrich, K.M. Strohm, F. Schäffler, J.-F. Luy�

2002 · 19 citations · 5 references

Concepts

Abstract

As the first step in the development of coplanar SiGe MMIC's, modelling and experimental results on passive components are presented. The investigations demonstrate that parasitic effects induced by passivation of high-resistivity silicon substrates play an important role. Efficient CAD tools are developed and verified by comparison with measurements.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

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