Enchanced multi-threshold (MTCMOS) circuits using variable well bias

Abstract

Article Share on Enchanced multi-threshold (MTCMOS) circuits using variable well bias Authors: Stephen V. Kosonocky IBM T.J. Watson Research Center, Yorktown Heights, NY IBM T.J. Watson Research Center, Yorktown Heights, NYView Profile , Mike Immediato IBM T.J. Watson Research Center, Yorktown Heights, NY IBM T.J. Watson Research Center, Yorktown Heights, NYView Profile , Peter Cottrell IBM Microelectronics, Burlington, VT IBM Microelectronics, Burlington, VTView Profile , Terence Hook IBM Microelectronics, Burlington, VT IBM Microelectronics, Burlington, VTView Profile , Randy Mann IBM Microelectronics, Burlington, VT IBM Microelectronics, Burlington, VTView Profile , Jeff Brown IBM Microelectronics, Burlington, VT IBM Microelectronics, Burlington, VTView Profile Authors Info & Claims ISLPED '01: Proceedings of the 2001 international symposium on Low power electronics and designAugust 2001 Pages 165–169https://doi.org/10.1145/383082.383125Online:06 August 2001Publication History 22citation492DownloadsMetricsTotal Citations22Total Downloads492Last 12 Months5Last 6 weeks0 Get Citation AlertsNew Citation Alert added!This alert has been successfully added and will be sent to:You will be notified whenever a record that you have chosen has been cited.To manage your alert preferences, click on the button below.Manage my AlertsNew Citation Alert!Please log in to your account Save to BinderSave to BinderCreate a New BinderNameCancelCreateExport CitationPublisher SiteGet Access