IEEE Electron Device Letters · 2006 · 15 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectromechanical SystemsMicroelectronicsMicrowave EngineeringMems FabricationMems PackagingMems SwitchesMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsRf MemsHigh-frequency IsolationInsertion LossInsertion Loss ReductionPrinted Circuit BoardsRf Mems FabricationRf Mems SwitchesRf SwitchesSwitch Fabrication Processes
This letter reports, for the first time, on RF MEMS switches integrated on flexible printed circuit boards (i.e., FR-4) using transfer technology. The devices were first processed on Si-substrate using a modified MEMS sequence and subsequently transferred onto an FR-4 substrate by thermal compressive bonding, mechanical grinding, and wet removal of silicon. The switches were demonstrated with flat metal membrane (top electrode), precisely controlled gap between the membrane and bottom electrode, low insertion loss (/spl les/ 0.15 dB at 20 GHz), and high isolation (/spl sim/ 21 dB at 20 GHz). This technology shows the potential to monolithically integrate RF MEMS components with other RF devices on organic substrate for RF system implementation.
10
Performance of low-loss RF MEMS capacitive switches
Charles L. Goldsmith, Zhimin Yao, S. Eshelman et al. · IEEE Microwave and Guided Wave Letters · 1998 · 428 citations