Concepedia

35.3: <i>Distinguished Paper</i> : A Novel Self‐Aligned Top‐Gate Oxide TFT for AM‐OLED Displays

Narihiro Morosawa, Yoshihiro Ohshima, Mitsuo Morooka, Toshiaki Arai, Tatsuya Sasaoka

SID Symposium Digest of Technical Papers · 2011 · 58 citations · 8 references

DOI

Abstract

Abstract We developed a novel self‐aligned top‐gate oxide TFT for AM‐OLED displays. Our developed Al reaction method to obtain source/drain regions is effective to fabricate a short channel and highly reliable TFT. A 9.9‐inch diagonal qHD AM‐OLED display was demonstrated to provide applicable solution for a large‐sized and ultra‐high definition OLED mass production.

References

8

Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

Jin‐Seong Park, Jae Kyeong Jeong, Yeon‐Gon Mo et al. · Applied Physics Letters · 2007 · 364 citations

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A new method to determine MOSFET channel length

Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 311 citations

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Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Byung Du Ahn, Hyun Soo Shin, Hyun Jae Kim et al. · Applied Physics Letters · 2008 · 211 citations

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3.1: <i>Distinguished Paper</i> : 12.1‐Inch WXGA AMOLED Display Driven by Indium‐Gallium‐Zinc Oxide TFTs Array

Jae Kyeong Jeong, Jong Han Jeong, Jong Hyun Choi et al. · SID Symposium Digest of Technical Papers · 2008 · 186 citations

69.2: Highly Reliable Oxide‐Semiconductor TFT for AM‐OLED Display

Toshiaki Arai, Narihiro Morosawa, Kazuhiko Tokunaga et al. · SID Symposium Digest of Technical Papers · 2010 · 77 citations

, , +11