IEEE Transactions on Microwave Theory and Techniques · 1993 · 13 citations · 5 references
Low-power ElectronicsElectrical EngineeringEngineering8-Ghz MmicRadio FrequencyHigh-frequency DeviceRf SemiconductorPower LimiterUnexpected Phase VariationsPower ElectronicsMicroelectronicsMicrowave EngineeringPower Electronic Devices
Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experienced by the signal through the device. Measured performances (phase variations less than 8 over a 22-dB input power range) are found to be in agreement with the theoretical ones obtained from large signal simulations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5
GaAs FET device and circuit simulation in SPICE
H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 516 citations
Device Modeling, Electrical Engineering, Semiconductor Device +8
On-wafer large signal pulsed measurements
J.F. Vidalou, F. Grossier, M. Camiade et al. · IEEE MTT-S International Microwave Symposium digest · 2003 · 20 citations
Engineering, Measurement, Education +18