Electric-Pulse-Induced Resistance Switching in Magnetoresistive Manganite Films Grown by Metalorganic Chemical Vapor Deposition

Abstract

Pr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ca <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> MnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (PCMO) films with the desired atomic composition were deposited at low temperature (480 degC) by metalorganic chemical vapor deposition (MOCVD) using in situ infrared spectroscopic monitoring. The electric-pulse-induced resistance switching was observed in PCMO-based devices with various kinds of metal electrodes. The resistance change was dependent on the Ca/(Pr+Ca) composition ratio of the films and the kind of the metal electrodes. Various resistance states for the multilevel data storage application were observed, depending on polarity and voltage of applied pulses