Spectroscopic Study on Metallorganic Chemical Vapor Deposition of Manganese Oxide Films

Abstract

The reaction mechanism of a manganese precursor, tris(dipivaloylmethanato)manganese , was investigated in liquid delivery metallorganic chemical vapor deposition (MOCVD) of manganese oxide films. The behavior of in the gas phase was analyzed under actual CVD conditions by in situ infrared absorption spectroscopy. The temperature dependence of the infrared absorption indicates that was decomposed in the gas phase under the actual deposition conditions. We discuss the correlation between the thermal decomposition of in the gas phase and film deposition of manganese oxides. When the substrate temperature is raised above , the deposition rate decreases, synchronized with the decrease of the infrared absorption by in the gas phase. The oxidation state of Mn in the deposited films was also investigated by high-resolution X-ray fluorescence spectroscopy. No significant difference in the oxidation state of Mn is found between the deposited films and the starting source material, .