Transient response during resistance switching in Ag∕Pr0.7Ca0.3MnO3∕Pt thin films

Abstract

The transient response during resistance switching in Ag∕Pr0.7Ca0.3MnO3∕Pt thin films is investigated by measurements using pulsed voltage biases. Semiconducting Pr0.7Ca0.3MnO3 (PCMO) films sandwiched by Ag and Pt electrodes show nonvolatile resistance switching (two orders of magnitude) as a result of applying pulsed voltage biases, even at room temperature. The transient responses of the voltage across the PCMO for a set (positive) and a reset (negative) pulse application are consistent with the resistance-switching behavior and show quite fast switching (3–100 ns) for the set pulse application, compared with 60–135 ns for the reset pulse application. The large resistance-switching ratio is saturated after a finite transient time, indicating that the carrier filling of the trap sites into PCMO is completed within quite a short time.