Publication | Closed Access
Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films
126
Citations
18
References
2006
Year
EngineeringPhase Change MemoryNanoelectronicsStable HysteresisMolecular Beam EpitaxyEpitaxial GrowthMaterials ScienceElectrical EngineeringData ReliabilityPhysicsOxide ElectronicsBias Temperature InstabilitySemiconductor MaterialMicroelectronicsResistive SwitchingApplied PhysicsSemiconductor MemoryThin FilmsContinuous Readout
We report on resistive switching of capacitor-like SrRuO3∕Ba0.7Sr0.3TiO3∕Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10000cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.
| Year | Citations | |
|---|---|---|
Page 1
Page 1