IEEE Electron Device Letters · 2005 · 24 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesRadio-frequency Integrated CircuitsBicmos TechnologyDe-embedding TechniquesHeterojunction Bipolar TransistorsMicrowave Noise CharacterizationNoise FigureNoise Figure MeasurementNoise Parameter ExtractionNoise Parameters
In this letter, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature. It was found that SiGe HBTs (fabricated in the framework of BiCMOS process) exhibit a maximum oscillation frequency f/sub max/ of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature. The noise performance has also been characterized at cryogenic temperatures, using an original de-embedding approach. Then, using the Hawkin's noise model in conjunction with an accurate small signal equivalent extraction, the four noise parameters have been estimated. The noise figure with a 50 /spl Omega/ source impedance was measured to be equal to 1.5 dB at 40 GHz at 78 K, which is one of the lowest value reported for BiCMOS SiGe HBT in the millimeter-wave range.
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230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
P. Chevalier, C. Fellous, Laurent Rubaldo et al. · 2004 · 35 citations