Hydrogen Diffusion and Solubility in Silicon Carbide

Abstract

Tritium diffusion coefficients and deuterium solubilities were measured for silicon carbide. At 500° to 1300° C, measured tritium diffusion coefficients were much lower than the recorded values for metals, whereas the activation energies for diffusion were much higher (30 to 75 kcal/mol). The solubility of deuterium in silicon carbide decreased as temperature increased and exhibited a pressure dependence of ∼ P 1l2 .