Defect Diffusion in Single Crystal Aluminum Oxide

Abstract

A defect diffusion coefficient was determined in single crystal aluminum oxide from 1400° to 1850°C by measuring the movement of the color boundary in a Ti 3+− doped single crystal heated in air. In this temperature range the experimental data can be represented by The interpretation developed is that this equation represents the diffusivity for a defect which contributes to aluminum self‐diffusion.