The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH - Concepedia

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The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH

18

Citations

9

References

2004

Year

Ying Gao, Zehong Zhang, Robert T. Bondokov, Stanislav I. Soloviev, Tangali S. Sudarshan

MRS Proceedings

Materials EngineeringMaterials ScienceElectrical EngineeringMolten KohEngineeringDoping ConcentrationNanoelectronicsApplied PhysicsSemiconductor Device FabricationConductivity TypeStructural CeramicMicroelectronicsPlasma EtchingCarbide

References

	Year	Citations

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