Stanislav I. Soloviev

Author

University of South Carolina

Also Known As

E. N. Sosnovets, S Soloviev, S. I. Soloviev, S. Soloviev, Stanislav I. Soloviev, Stanislav Soloviev

Publications

876

Citations

H-Index

Concepts

All Affiliations

University of South Carolina General Electric (United States)GE Global Research (United States)Hongik University Nanyang Technological University

About

Stanislav I. Soloviev is an author at University of South Carolina specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	661
2	Electrical Engineering	15	18	620
3	Applied Physics	14	20	596
4	Materials Science	7	7	164
5	Materials Engineering	5	5	103

Stanislav I. Soloviev

Publications

661

Citations

H-Index

Page 1

	Year	Citations
Impact Ionization Coefficients in 4H-SiC W.S. Loh, Beng Koon Ng, Jo Shien Ng, IEEE Transactions on Electron Devices Electrical Engineering325-Nm ExcitationEngineeringImpact Ionization CoefficientsPhysics	2008	85
Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs Kevin Matocha, Greg Dunne, Stanislav I. Soloviev, IEEE Transactions on Electron Devices ReliabilityElectrical EngineeringReliability EngineeringEngineeringNanoelectronics	2008	79
Deep UV photon-counting detectors and applications Gary A. Shaw, Andrew M. Siegel, Joshua Model, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE PhotonicsElectrical EngineeringUltraviolet LightEngineeringInfrared Sensor	2009	65
Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations R. A. Berechman, Marek Skowroński, Stanislav I. Soloviev, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringSolid-state LightingEngineeringEdge Dislocations	2010	55
Solar-Blind 4H-SiC Single-Photon Avalanche Diode Operating in Geiger Mode Alexey Vert, Stanislav I. Soloviev, Jody Fronheiser, IEEE Photonics Technology Letters Short Wavelength OpticOptical MaterialsEngineeringOptical TestingDirect Detection	2008	47
Investigation of boron diffusion in 6H-SiC Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan Applied Physics Letters SemiconductorsBoron AcceptorsElectrical EngineeringBoron DiffusionEngineering	2003	43
Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection Ho‐Young Cha, Stanislav I. Soloviev, S. Zelakiewicz, IEEE Sensors Journal EngineeringPhotoelectric SensorElectronic DevicesPhotodetectorsOptical Properties	2008	42
Selective doping of 4H–SiC by codiffusion of aluminum and boron Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesEngineering	2001	31
Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes Sergey I. Maximenko, Stanislav I. Soloviev, D. I. Cherednichenko, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringDislocation Interaction	2004	25
Doping of 6H–SiC by selective diffusion of boron Stanislav I. Soloviev, Yu Gao, T. S. Sudarshan Applied Physics Letters Materials ScienceSemiconductorsMaterials EngineeringElectronic DevicesElectrical Engineering	2000	25

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