Fabrication of submicron high-aspect-ratio GaAs actuators

Abstract

Submicron, single-crystal gallium arsenide (SC-GaAs) actuators have been designed, fabricated, and operated. The fabrication process, called SCREAM-II (single crystal reactive etching and metallization II), uses chemically assisted ion beam etching (CAIBE) and reactive ion etching (RIE) to produce suspended and movable SC-GaAs structures with up to a 25:1 aspect ratio of vertical depth (10 mu m) to lateral width (400 nm). Integrated actuators with predominantly vertical sidewall (PVS) aluminum electrodes are used to move the structures. Silicon nitride is used as an etch mask, structural stiffener, and electrical insulator. An x-y stage with integrated actuators produces controllable x-y displacements of +or-1.8 mu m when a voltage of 54.5 V is applied to either or both of the x and y actuators. The x-y stage resonates for an applied sinewave of 20 V (peak to peak) with f=10.5 kHz and a DC offset of 10 V. The structural vibration amplitude is 0.6 mu m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>