Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications

Abstract

In this paper, we report high-k MiM capacitors including Ta/sub 2/O/sub 5/, TaO/sub x/N/sub y/, HfO/sub 2/, Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5//Al/sub 2/O/sub 3/ stack layer integrated in 0.13 /spl mu/m 8-level Cu-metallization technology using Cu barrier as both top and bottom electrodes. Ta/sub 2/O/sub 5/ exhibits excellent voltage and temperature linearity of capacitance. Al/sub 2/O/sub 3/ shows low leakage, but poor voltage and temperature linearity. Voltage linearity could be significantly affected by high-k deposition temperature. We present high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 13 ppm/V/sup 2/.