C. H. Lin

Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications

Y. L. Tu, H.L. Lin, Lumen Chao et al. · 2004 · 36 citations

Materials Engineering, Materials Science, Electrical Engineering +13

In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

M. L. Huang, S. W. Chang, M. K. Chen et al. · 2015 · 32 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects

Robin C.J. Wang, Kuei‐Shu Chang‐Liao, T.K. Wang et al. · Thin Solid Films · 2008 · 24 citations

Materials Science, Electrical Conduction, Electrical Engineering +12

High performance In<inf>0.53</inf>Ga<inf>0.47</inf>As FinFETs fabricated on 300 mm Si substrate

M. L. Huang, S. W. Chang, M. K. Chen et al. · 2016 · 23 citations

Materials Engineering, Electrical Engineering, Wafer Scale Processing +11

Electrified thermochemical reaction systems with high-frequency metamaterial reactors

C. H. Lin, Chenghao Wan, Zhennan Ru et al. · Joule · 2024 · 13 citations