A general characterization and simulation method for deposition and etching technology

Abstract

A topography simulation system and a six-parameter unified process model are proposed for general characterization of deposition and etching technology. This system is fit to use experimentally. This model precisely expresses the process characteristics of deposition and etching equipment. A surface movement vector calculation method suitable for the unified process model is also given. This method is used for calculating cross-sectional profiles including convex and concave corners, and for general LSI processes where deposition and etching reactions occur simultaneously. The parameters can be extracted from experimental results. The extraction method is also introduced. The simulated results agree well with the experimental ones of sputter deposition and bias-ECR (electron cyclotron resonance) deposition.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>